ISL9N307AS3ST

ISL9N307AP3/ISL9N307AS3ST January 2002 ISL9N307AP3/ISL9N307AS3ST N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features Fast switching rDS(ON) = 0.006Ω (Typ), VGS = 10V rDS(ON) = 0.010Ω (Typ), VGS = 4.5V Qg (Typ) = 28nC, VGS = 5V Qgd (Typ) = 10nC CISS (Typ) = 3000pF DRAIN (FLANGE) SOURCE DRAIN GATE D Applications DC/DC converters GATE SOURCE G DRAIN (FLANGE) S TO-263AB Symbol VDSS VGS TO-220AB Ratings 30 ±20 75 52 16 Figure 4 100 0.67 -55 to 175 Units V V A A A A W W/oC oC MOSFET Maximum Ratings TA = 25°C unless otherwise noted Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 100oC, VGS = 4.5V) Continuous (TC = 25oC, VGS = V, RθJC = 43oC/W) Pulsed Power dissipation Derate above 25oC Operating and Storage Temperature ID PD TJ, TSTG Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-220, TO-263 Thermal Resistance Junction to Ambient TO-220, TO-263 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 1.36 62 43 oC/W oC/W oC/W Package Marking and Ordering Information Device Marking N307AS N307AP Device ISL9N307AS3ST ISL9N307...