KST5401
KST5401
High Voltage Transistor
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector
PNP Epitaxial Silicon Transist...
KST5401
KST5401
High Voltage
Transistor
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector
PNP Epitaxial Silicon
Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature Value -160 -150 -5 -500 350 150 Units V V V mA mW °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO hFE Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Test Condition IC= -100µA, IE=0 IC= -1.0mA, IB=0 IE= -10µA, IC=0 VCB= -100V, IE=0 VCE= -5V, IC= -1.0mA VCE= -5V, IC= -10mA VCE= -5V, IC= -50mA IC= -10mA, IB= -1.0mA IC= -50mA, IB= -5mA IC= -10mA, IB= -1.0mA IC= -50mA, IB= -5mA IC= -10mA, VCE= -10V f=100MHz VCB= -10V, IE=0, f=1.0MHz VCE= -5V, IC= -200µA RS=10KΩ, f=10Hz to 15.7KHz 100 50 60 50 Min. -160 -150 -5 -50 240 -0.2 -0.5 -1.0 -1.0 300 6.0 8.0 V V V V MHz pF dB Max. Units V V V nA
VCE (sat) VBE (sat) fT Cob NF
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure
Marking
2L
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
KST5401
Typical Characteristics
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1000
-10
IC = 10 IB
hFE, DC CURRENT GAIN
VCE = -5V
-1
V BE(sat)
100
-0.1
V...