KST5088

KST5088/5089 KST5088/5089 Low Noise Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : KST5088 : KST5089 VCEO Collector-Emitter Voltage : KST5088 : KST5089 VEBO IC PC TSTG Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature 30 25 4.5 50 350 150 V V V mA mW °C 35 30 V V Value Units Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage : KST5088 : KST5089 Collector-Emitter Breakdown Voltage : KST5088 : KST5089 Collector Cut-off Current : KST5088 : KST5089 Emitter Cut-off Current DC Current Gain : KST5088 : KST5089 : KST5088 : KST5089 : KST5088 : KST5089 VCE(sat) VBE(sat) fT Cob NF Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain-Bandwidth Product Output Capacitance Noise Figure : KST5088 : KST5089 IC=100µA, VCE=5V RS=10KΩ, f=10Hz to 15.7KHz 3 2 dB dB VCE=5V, IC=100µA VCE=5V, IC=1mA VCE=5V, IC=10mA IC=10mA, IB=1mA IC=10mA, IB=1mA VCE=5V, IC=500µA, f=20MHz VCB=5V, IE=0, f=100KHz 50 4 300 400 350 450 300 400 900 1,200 Test Condition IC=100µA, IE=0 Min. 35 30 IC=1mA, IB=0 30 25 VCB=20V, IE=0 VCB=15V, IE=0 VEB=3V, IC=0 50 50 50 V V nA nA nA Max. Units V V BVCEO ICBO IEBO hFE 0.5 0.8 V V MHz pF ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KST5088/5089 Marking Code Type Mark KST5088 1Q ...