KST4126

KST4126 KST4126 General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TSTG RTH(j-a) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature Thermal Resistance junction to Ambient Value -25 -25 -4 -200 350 150 357 Units V V V mA mW °C °C/W Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (sat) fT Cib Cob NF Parameter Collector-Base Breakdown Voltage * Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product Input Capacitance Output Capacitance Noise Figure Test Condition IC= -10µA, IE=0 IC= -1mA, IE=0 IE= -10µA, IC=0 VCB= -20V, IE=0 VBE= -3V, IC=0 VCE= -1V, IC= -2mA VCE= -1V, IC= -50mA IC= -50mA, IB= -5mA IC= -50mA, IB= -5mA VCE= -20V, IC= -10mA, f=100MHz VBE= -0.5V, IC=0, f=1MHz VCB= -5V, IE=0, f=1MHz VCE= -5V, IC= -100µA, RS=1KΩ Noise Bandwidth=10Hz to 15.7KHz 250 10 4.5 4 120 60 Min. -25 -25 -4 -50 -50 360 -0.4 -0.95 V V MHz pF pF dB nA nA Max. Units V V * Pulse Test: PW≤300µs, Duty Cycle≤2% Marking C3 ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KST4126 Package Dimensions SOT-23 ...