KST4125

KST4125 KST4125 General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature Value -30 -30 -4 -200 350 150 Units V V V mA mW °C Refer to KST3906 for graphs Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (sat) fT Cob NF Parameter Collector-Base Breakdown Voltage * Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure Test Condition IC= -10µA, IE=0 IC= -1mA, IE=0 IE= -10µA, IC=0 VCB= -20V, IE=0 VEB= -3V, IC=0 VCE= -1V, IC= -2.0mA VCE= -1V, IC= -50mA IC= -50mA, IB= -5.0mA IC= -50mA, IB= -5.0mA IC= -10mA, VCE= -20V f=100MHz VCB= -5V, IE=0, f=100KHz IC= -100µA, VCE= -5V RS=1KΩ f=10Hz to 15.7KHz 200 4.5 5 50 25 Min. -30 -30 -4 -50 -50 150 -0.4 -0.95 V V MHz pF dB Max. Units V V V nA nA * Pulse Test: PW≤300µs, Duty Cycle≤2% Marking ZD ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KST4125 Package Dimensions SOT-23 0.20 MIN 2.40 ±0.10 0.40 ±0.03 1.30 ±0.10 0.45~0.60 0.03~0.10 0.38 REF 0.40 ±0.03 ...