KST13

KST13/14 KST13/14 Darlington Amplifier Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCES VEBO IC PC TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature Value 30 30 10 300 350 150 Units V V V mA mW °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCES ICBO IEBO hFE Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain : KST13 : KST14 : KST13 : KST14 VCE (sat) VBE (on) fT Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product VCE=5V, IC=10mA VCE=5V, IC=100mA IC=100mA, IB=0.1mA VCE=5V, IC=100mA VCE=5V, IC=10mA f=100MHz 125 5K 10K 10K 20K 1.5 2.0 V V MHz Test Condition IC=100µA, VBE=0 VCB=30V, IE=0 VEB=10V, IC=0 Min. 30 Max. 100 100 Units V nA nA Marking Code Type Mark KST13 1M Marking KST14 1N 1M ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KST13/14 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000k 10 VCE = 5V IC = 1000 I B hFE, DC CURRENT GAIN 100k VBE(sat) 1 V CE(sat) 0.5 0.3 10k 1k 1 0.1 5 10 100 300 10 100 1000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC Current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 fT[MHz], CUR...