KSR1105

KSR1105 KSR1105 Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =4.7KΩ, R2=10KΩ) Complement to KSR2105 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Marking Equivalent Circuit C R0 5 R1 B R2 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 50 50 10 100 200 150 -55 ~ 150 E Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO ICBO hFE VCE(sat) Cob fT VI(off) VI(on) R1 R1/R2 Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance Current Gain-Bandwidth Product Input Off Voltage Input On Voltage Input Resistor Resistor Ratio Test Condition IC=10µA, IE=0 IC=100µA, IB=0 VCB=40V, IE=0 VCE=5V, IC=5mA IC=10mA, IB=0.5mA VCB=10V, IE=0 f=1.0MHz VCE=10V, IC=5mA VCE=5V, IC=100µA VCE=0.3V, IC=20mA 3.2 0.42 4.7 0.47 0.3 2.5 6.2 0.52 3.7 250 30 0.3 V pF MHz V V KΩ Min. 50 50 0.1 Typ. Max. Units V V µA ©2002 Fairchild Semiconductor Corporation Rev. A2, October 2002 KSR1105 Typical Characteristics 1000 100 VCE = 5V R1 = 4.7K R2 = 10K 100 VCE =0.3V R1 = 4.7K R2 = 10K VI(on)[...