KSP94

KSP94 KSP94 High Voltage Transistor High Collector-Emitter Voltage: VCEO= -400V Low Collector-Emitter Saturation Voltage Complement to KSP44 1 TO-92 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value -400 -400 -6 -300 625 150 -55~150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCES BVEBO ICBO ICES IEBO hFE1 hFE2 hFE3 hFE4 VCE (sat)1 VCE (sat)2 VBE (sat) Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC= -100µA, IE=0 IC= -100µA, VBE=0 IE= -10µA, IC=0 VCB= -300V, VE=0 VCE= -400V, VBE=0V VBE= -4V, IC=0 VCE= -10V, IC= -1mA VCE= -10V, IC= -10mA VCE= -10V, IC= -50mA VCE= -10V, IC= -100mA IC= -10mA, IB= -1mA IC= -50mA, IB= -5mA IC= -10mA, IB= -1mA VCB= -20V, IE=0, f=1MHz 7 40 50 45 40 Min. -400 -400 -6 -100 -1 -100 300 Typ. Max. Units V V V nA µA nA Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance -500 -750 -750 mV mV mV pF ©2002 Fairchild Semiconductor Corporation Rev. A2, July 2002 KSP94 Typical Characteristics 1000 -10 VBE(s...