KSP6520

KSP6520/6521 KSP6520/6521 Amplifier Transistor Collector-Emitter Voltage: VCEO=25V Collector Power Dissipation: PC (max)=625mW 1 TO-92 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 40 25 4 100 625 150 -55 ~ 150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO BVEBO ICBO hFE Parameter Collector-Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector Cut-off Current DC Current Gain : KSP6520 : KSP6521 : KSP6520 : KSP6521 VCE (sat) Cob NF Collector-Emitter Saturation Voltage Output Capacitance Noise Figure IC=100µA, VCE=10V IC=2mA, VCE=10V IC=50mA, IB=5mA VCB=10V, IE=0 f=100KHz IC=10µA, VCE=5V RS=10KΩ f=10Hz to 10KHz 100 150 200 300 Test Condition IC=0.5mA, IB=0 IC=10, IC=0 VCB=30V, IE=0 VCE=20V, IE=0 Min. 25 4 50 50 Typl Max. Units V V nA nA 400 600 0.5 3.5 3 V pF dB ©2002 Fairchild Semiconductor Corporation Rev. B1, September 2002 KSP6520/6521 Package Dimensions TO-92 4.58 –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 –0.05 +0.10 3.86MAX 1.02 ±0.10 0.38 –0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B1,...