KSP45

KSP44/45 KSP44/45 High Voltage Transistor Collector-Emitter Voltage: VCEO=KSP44: 400V KSP45: 350V Collector Power Dissipation: PC (max)=625mW 1 TO-92 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : KSP44 : KSP45 VCEO Collector-Emitter Voltage : KSP44 : KSP45 VEBO IC PC PC TJ Emitter-Base Voltage Collector Current Collector Power Dissipation (Ta=25°C) Collector Power Dissipation (TC=25°C) Junction Temperature 1. Emitter 2. Base 3. Collector Value 500 400 400 350 6 300 625 1.5 150 Units V V V V V mA mW W °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage : KSP44 : KSP45 * Collector -Emitter Breakdown Voltage : KSP44 : KSP45 Emitter-Base Breakdown Voltage Collector Cut-off Current : KSP44 : KSP45 ICES Collector Cut-off Current : KSP44 : KSP45 IEBO hFE Emitter Cut-off Current * DC Current Gain VCE=400V, IB=0 VCE=320V, IB=0 VEB=4V, IC=0 VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=50mA VCE=10V, IC=100mA IC=1mA, IB=0.1mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA VCB=20V, IE=0, f=1MHz 40 50 45 40 0.5 0.5 0.1 200 µA µA µA VCB=400V, IE=0 VCB=320V, IE=0 0.1 0.1 µA µA Test Condition IC=100µA, IB=0 Min. 500 400 IC=1mA, IB=0 400 350 IE=100µA, IC=0 6 V V V Max. Units V V BVCEO BVEBO ICBO VCE (sat) * Collector-Emitter Saturation Voltage 0.4 0.5 0.75 0.75 7 V V V V pF VBE (sa...