KSK595H

KSK595H KSK595H Capacitor Microphone Applications Especially Suited for use in Audio, Telephone Capacitor Microphones Excellent Voltage Characteristic Excellent Transient Characteristic 3 2 1 SOT-23 1.Drain 2. Source 3. Gate Si N-channel Junction FET Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VGDO IG ID PD TJ TSTG Parameter Gate-Drain Voltage Gate Current Drain Current Power Dissipation Junction Temperature Storage Temperature Ratings -20 10 1 100 150 -55 ~ 150 Units V mA mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVGDO VGS(off) IDSS lYFSl Ciss Crss Parameter Gate-Drain Breakdown Voltage Gate-Source Cut-off Voltage Drain Current Forward Transfer Admittance Input Capacitance Output Capacitance Test Condition IG= -100uA VDS=5V, ID=1µA VDS=5V, VGS=0 VDS=5V, VGS=0, f=1MHz VDS=5V, VGS=0, f=1MHz VDS=5V, VGS=0, f=1MHz 150 0.4 1.2 3.5 0.65 Min. -20 Typ. -0.6 Max. -1.5 350 Units V V µA ms pF pF ©2002 Fairchild Semiconductor Corporation Rev. C1, October 2002 KSK595H Typical Characteristics 500 450 400 1.6 IDSS = 200µA 1.4 VDS = 5V ID[mA], DRAIN CURRENT ID[µ A], DRAIN CURRENT 1.2 350 300 250 1.0 0.8 VGS = 0 200 150 100 50 0 0 1 2 3 4 5 6 7 8 9 10 0.6 VGS = -0.1V VGS = -0.2V VGS = -0.3V VGS = -0.4V 0.4 0.2 0.0 -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.0 VDS[V], DRAIN-SOURCE VOLTAGE VGS[V], GATE-SOURCE VOLTAGE Figure 1. Figure 2. VGS(off)[V], GATE-SOURCE CUT-OFF VOLTAGE -10 VDS = 5V ID = 1µA...