KSH350

KSH350 KSH350 High Voltage Power Transistors D-PAK for Surface Mount Applications Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, “- I” Suffix) 1 D-PAK 1.Base 1 I-PAK 3.Emitter 2.Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC = 25°C) Collector Dissipation (Ta = 25°C) Junction Temperature Value - 300 - 300 -3 - 0.5 - 0.75 15 1.56 150 Units V V V A A W W °C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) ICEO IEBO hFE Parameter * Collector-Emitter Sustaining Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain Test Condition IC = -1mA, IB = 0 VCB = -300V, IE =0 VEB = -3V, IC = 0 VCE = -10V, IC = -50mA 30 Min. -300 Max. -0.1 -0.1 240 Units V mA mA * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002 KSH350 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 -10 VCE = -10V IC = 10 IB hFE, DC CURRENT GAIN 100 -1 V BE(sat) 10 -0.1 VCE(sat) 1 -1 -10 -100 -1000 -0.01 -1 -10 -100 -1000 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -1000 24 ICP(max) 21 IC[mA],...