Document
KSH30/30C
KSH30/30C
General Purpose Amplifier Low Speed Switching Applications
• Lead Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP30 and TIP30C
1
D-PAK 1.Base
1
I-PAK 3.Emitter
2.Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : KSH30 : KSH30C VCEO Collector-Emitter Voltage : KSH30 : KSH30C Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) TJ TSTG Junction Temperature Storage Temperature - 40 - 100 - 40 - 100 -5 -1 -3 - 0.4 15 1.56 150 - 65 ~ 150 V V V V V A A A W W °C °C Value Units
VEBO IC ICP IB PC
Electrical Characteristics TC=25°C unless otherwise noted
Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : KSH30 : KSH30C Collector Cut-off Current : KSH30 : KSH30C ICES Collector Cut-off Current : KSH30 : KSH30C IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter On Voltage Current Gain Bandwidth Product VCE = - 40V, VBE = 0 VCE = 100V, VBE = 0 VBE = - 5V, IC = 0 VCE = - 4V, IC = - 0.2A VCE = - 4V, IC = - 1A IC = - 1A, IB = - 125mA VCE = - 4A, IC = - 1A VCE = - 10V, IC = - 200mA 3 40 15 - 20 - 20 -1 75 - 0.7 - 1.3 V V MHz µA µA mA VCE = - 40V, IB = 0 VCE = - 60V, IB = 0 - 50 - 50 µA µA Test Condition IC = - 30mA, IB = 0 Min. - 40 - 100 Max. Units V V
ICEO
* Pulse Test: PW≤300ms, Duty Cycle≤2%
©2002 Fairchild Semiconductor Corporation
Rev. B3, October 2002
KSH30/30C
Typical Characteristics
1000
10
VCE = 2V
IC=10IB
hFE, DC CURRENT GAIN
tR, tD[µs],TURN ON TIME
100
1
tR, VCC= - 30V
tR, VCC= - 10V
0.1
10
tD , VBE(off)=2V
1 -0.01
-0.1
-1
-10
0.01 -0.01
-0.1
-1
-10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Turn On Time
10
-100
IC=10IB
tSTG
1
IC[A], COLLECTOR CURRENT
tF, tSTG[µs],TURN OFF TIME
-10
tF, V CC= - 30V
-1
1m
DC
10 0µ s 50 0µ s
s
tF, V CC= - 10V
0.1
-0.1
0.01 -0.01
-0.1
-1
-10
-0.01 -1 -10 -100 -1000
IC[A], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Turn Off Time
Figure 4. Safe Operating Area
20
PC[W], POWER DISSIPATION
15
10
5
0 0 25 50
o
75
100
125
150
175
TC[ C], CASE TEMPERATURE
Figure 5. Power Derating
©2002 Fairchild Semiconductor Corporation
KSH30C
KSH30
Rev. B3, October 2002
KSH30/30C
Package Dimensions
D-PAK
6.60 ±0.20 5.34 ±0.30 (0.50) (4.34) (0.50)
0.70 ±0.20
2.30 ±0.10 0.50 ±0.10
0.60 ±0.20
6.10 ±0.20
2.70 ±0.20
9.50 ±0.30
0.91 ±0.10
0.80 ±0.20
MAX0.96 2.30TYP [2.30±0.20]
0.76 ±0.10 2.30TYP [2.30±0.20]
0.89 ±0.10
0.50 ±0.10 1.02 ±0.20 2.30 ±0.20
(0.70)
(0.90) (0.10) (3.05)
6.10 ±0.20
9.50 ±0.30
2.70 ±0.20
(2XR0.25)
0.76 ±0.10
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B3, October 2002
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