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KSH30C Dataheets PDF



Part Number KSH30C
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description PNP Transistor
Datasheet KSH30C DatasheetKSH30C Datasheet (PDF)

KSH30/30C KSH30/30C General Purpose Amplifier Low Speed Switching Applications • Lead Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP30 and TIP30C 1 D-PAK 1.Base 1 I-PAK 3.Emitter 2.Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : KSH30 : KSH30C VCEO Collector-Emitter Voltage : KSH30 : KSH30C Emitter-Base Voltage Colle.

  KSH30C   KSH30C



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KSH30/30C KSH30/30C General Purpose Amplifier Low Speed Switching Applications • Lead Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP30 and TIP30C 1 D-PAK 1.Base 1 I-PAK 3.Emitter 2.Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : KSH30 : KSH30C VCEO Collector-Emitter Voltage : KSH30 : KSH30C Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) TJ TSTG Junction Temperature Storage Temperature - 40 - 100 - 40 - 100 -5 -1 -3 - 0.4 15 1.56 150 - 65 ~ 150 V V V V V A A A W W °C °C Value Units VEBO IC ICP IB PC Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : KSH30 : KSH30C Collector Cut-off Current : KSH30 : KSH30C ICES Collector Cut-off Current : KSH30 : KSH30C IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter On Voltage Current Gain Bandwidth Product VCE = - 40V, VBE = 0 VCE = 100V, VBE = 0 VBE = - 5V, IC = 0 VCE = - 4V, IC = - 0.2A VCE = - 4V, IC = - 1A IC = - 1A, IB = - 125mA VCE = - 4A, IC = - 1A VCE = - 10V, IC = - 200mA 3 40 15 - 20 - 20 -1 75 - 0.7 - 1.3 V V MHz µA µA mA VCE = - 40V, IB = 0 VCE = - 60V, IB = 0 - 50 - 50 µA µA Test Condition IC = - 30mA, IB = 0 Min. - 40 - 100 Max. Units V V ICEO * Pulse Test: PW≤300ms, Duty Cycle≤2% ©2002 Fairchild Semiconductor Corporation Rev. B3, October 2002 KSH30/30C Typical Characteristics 1000 10 VCE = 2V IC=10IB hFE, DC CURRENT GAIN tR, tD[µs],TURN ON TIME 100 1 tR, VCC= - 30V tR, VCC= - 10V 0.1 10 tD , VBE(off)=2V 1 -0.01 -0.1 -1 -10 0.01 -0.01 -0.1 -1 -10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Turn On Time 10 -100 IC=10IB tSTG 1 IC[A], COLLECTOR CURRENT tF, tSTG[µs],TURN OFF TIME -10 tF, V CC= - 30V -1 1m DC 10 0µ s 50 0µ s s tF, V CC= - 10V 0.1 -0.1 0.01 -0.01 -0.1 -1 -10 -0.01 -1 -10 -100 -1000 IC[A], COLLECTOR CURRENT VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 3. Turn Off Time Figure 4. Safe Operating Area 20 PC[W], POWER DISSIPATION 15 10 5 0 0 25 50 o 75 100 125 150 175 TC[ C], CASE TEMPERATURE Figure 5. Power Derating ©2002 Fairchild Semiconductor Corporation KSH30C KSH30 Rev. B3, October 2002 KSH30/30C Package Dimensions D-PAK 6.60 ±0.20 5.34 ±0.30 (0.50) (4.34) (0.50) 0.70 ±0.20 2.30 ±0.10 0.50 ±0.10 0.60 ±0.20 6.10 ±0.20 2.70 ±0.20 9.50 ±0.30 0.91 ±0.10 0.80 ±0.20 MAX0.96 2.30TYP [2.30±0.20] 0.76 ±0.10 2.30TYP [2.30±0.20] 0.89 ±0.10 0.50 ±0.10 1.02 ±0.20 2.30 ±0.20 (0.70) (0.90) (0.10) (3.05) 6.10 ±0.20 9.50 ±0.30 2.70 ±0.20 (2XR0.25) 0.76 ±0.10 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B3, October 2002 (.


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