KSE803

KSE800/801/803 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @IC= 1.5 and 2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS Complement to KSE700/701/702/703 TO-126 ABSOLUTE MAXIMUM RATINGS Characteristic Collector- Base Voltage : KSE800/801 : KSE802/803 Collector-Emitter Voltage : KSE800/801 : KSE802/803 Emitter- Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Symbol VCBO 60 80 VCEO 60 80 5 4 0.1 40 150 -55 ~ 150 V V V A A W °C °C V V Rating Unit VEBO IC IB PC TJ T STG 1. Emitter 2. Collector 3. Base ELECTRICAL CHARACTERISTICS (TC=25°C) Characteristic Collector Emitter Breakdown Voltage : KSE800/801 : KSE802/803 Collector Cutoff Current : KSE800/801 : KSE802/803 Collector Cutoff Current Symbol BVCEO Test Condition IC = 50mA, IB = 0 Min 60 80 ICEO VCE = 60V, IB = 0 VCE = 80V, IB = 0 VCB = Rated BVCEO, IE = 0 VCB = Rated BVCEO, IE = 0 T C = 100°C VBE = 5V, IC = 0 VCE = 3V, IC = 1.5A VCE = 3V, IC = 2A VCE = 3V, IC = 4A IC = 1.5A, IB = 30mA IC = 2A, IB = 40mA IC = 4A, IB = 40mA VBE(on) VCE = 3V, IC = 1.5A VCE = 3V, IC = 2A VCE = 3V, IC = 4A 1.2 2.5 3 V V V 100 100 100 500 2 750 750 100 2.5 2.8 3 V V V µA µA µA µA mA Max Unit V V ICBO Emitter Cutoff Current DC Current Gain : KSE800/802 : KSE801/803 : ALL DEVICES Collector-Emitter Saturation Voltage : KSE800/802 : KSE801/803 : ALL DEVICES Base-Emitter On Voltage : KSE800/802 : KSE801/803 : ALL DEVICES ...