KSE350
KSE350
High Voltage General Purpose Applications
• High Collector-Emitter Breakdown Voltage • Suitable for Trans...
KSE350
KSE350
High Voltage General Purpose Applications
High Collector-Emitter Breakdown Voltage Suitable for Transformer Complement to KSE340
1
TO-126 2.Collector 3.Base
1. Emitter
PNP Epitaxial Silicon
Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value - 300 - 300 -5 - 500 20 150 - 65 ~ 150 Units V V V mA W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol BVCEO ICBO IEBO hFE Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC = - 1mA, IB = 0 VCB = - 300V, IE = 0 VBE = - 3V, IC = 0 VCE = - 10V, IC = - 50mA 30 Min. -300 Max. -100 -100 240 Units V µA µA
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSE350
Typical Characteristics
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1000
-10
VCE = 10V
IC = 10IB
hFE, DC CURRENT GAIN
100
-1
VBE(sat)
VCE(sat)
-0.1
10
1 -1 -10 -100 -1000
-0.01 -1 -10 -100 -1000
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
-10000
25
IC[A], COLLECTOR CURRENT
-1000
PC[W], POWER DISSIPATION
20
15
10 0µ s
50 0µ s
1m
DC
10
s
-100
5
-10 -10
0 -100 -1000 0 25 50
o
75
...