KSE13003

KSE13003 — NPN Silicon Transistor KSE13003 NPN Silicon Transistor High Voltage Switch Mode Applications High Voltage Capability High Speed Switching Suitable for Switching Regulator and Motor Control March 2008 1 TO-126 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings* TC = 25°C unless otherwise noted (notes_1) Symbol Parameter Value VCBO Collector-Base Voltage 700 VCEO Collector-Emitter Voltage 400 VEBO Emitter-Base Voltage 9 IC Collector Current (DC) 1.5 ICP Collector Current (Pulse) 3 IB Base Current 0.75 PC Collector Dissipation (TC = 25°C) 20 TJ Junction Temperature 150 TSTG Storage Temperature Range -65 ~ 150 * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES_1: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Units V V V A A A W °C °C hFE Classification Classification hFE* * Test on VCE = 2V, IC = 0.5A. H1 9 ~ 16 H2 14~ 21 H3 19 ~ 26 © 2007 Fairchild Semiconductor Corporation KSE13003 Rev. 1.0.0 1 www.fairchildsemi.com KSE13003 — NPN Silicon Transistor Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Conditions BVCEO IEBO hFE VCE(sat) VBE(sat) Cob fT tON tSTG tF Collector-Emitter Breakdown Voltage Emitter Cut-off Current *DC Current Gain *Collector Emitter Saturation Volt...