KSD985

KSD985/986 KSD985/986 Low Frequency Power Amplifier Low Speed Switching Industrial Use 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Collector-Base Voltage Collector-Emitter Volage : KSD985 : KSD986 VEBO IC ICP IB PC PC TJ TSTG Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 60 80 8.0 1.5 3.0 0.15 1.0 10 150 - 55 ~ 150 V V V A A A W W °C °C Value 150 Units V * PW≤300µs, Duty Cycle10% Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO ICER ICEX1 ICEX2 IEBO hFE1 hFE2 VCE(sat) VBE(sat) tON tSTG tF Parameter Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Test Condition VCB = 60V, IE = 0 VCE = 60V, RBE = 51Ω @ TC = 125°C VCE = 60V, VBE(off) = -1.5A VCE = 60V, VBE(off) = -1.5A @ TC = 125°C VEB = 5V, IC = 0 VCE = 2V, IC = 0.5A VCE = 2V, IC = 1A IC = 1A, IB = 1mA IC = 1A, IB = 1mA VCC = 50V, IC = 1A IB1 = - IB2 = 1mA RL = 50Ω 0.5 1.0 1.0 1000 2000 Min. Typ. Max. 10 1.0 10 1.0 1.0 30000 1.5 2.0 V V µs µs µs Units µA mA µA mA mA Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter Saturation Voltage Turn ON Time Storage Time Fall Time * Pulse Test: PW≤350µs, Duty Cycle≤2% hFE Classification Classification hFE2 R 2000 ~ 5000 O 400...