KSD880

KSD880 KSD880 Low Frequency Power Amplifier Complement to KSB834 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 60 60 7 3 0.3 30 150 - 55 ~ 150 Units V V V A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO IEBO BVCEO hFE1 hFE2 VCE(sat) VBE(on) fT Cob tON tSTG tF Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Storage Time Fall Time Test Condition VCB = 60V, IE = 0 VEB = 7V, IC = 0 IC = 50mA, IB = 0 VCE = 5V, IC = 0.5A VCE = 5V, IC = 3A IC = 3A, IB = 0.3A VCE = 5V, IC = 0.5A VCE = 5V, IC = 0.5A VCB = 10V, IE = 0, f = 1MHz VCC = 30V, IC = 1A IB1 = - IB2 = 0.2A RL = 30Ω 60 60 20 0.4 0.7 3 70 0.8 1.5 0.8 300 1 1 V V MHz pF µs µs µs Min. Typ. Max. 100 100 Units µA µA V hFE Classification Classification hFE1 O 60 ~ 120 Y 100 ~ 200 G 150 ~ 300 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD880 Typical Characteristics 4 1000 IC[A], COLLECTOR CURRENT IB = 50mA IB = 40mA 2 hFE, DC CURRENT GAIN 3 IB = 90mA IB = 80mA IB = 70mA ...