KSD568

KSD568/569 KSD568/569 Low Frequency Power Amplifier Low Speed Switching Industrial Use Complement to KSB707/708 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature : KSD568 : KSD569 Value 100 60 80 7 7 15 3.5 40 1.5 150 - 55 ~ 150 Units V V V V A A A W W °C °C * PW≤300µs, Duty Cycle≤10% Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Parameter Collector Cut-off Current Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter Saturation Voltage Test Condition VCB = 80V, IE = 0 VEB = 5V, IC = 0 VCE = 1V, IC = 3A VCE = 1V, IC = 5A IC = 5A, IB = 0.5A IC = 5A, IB = 0.5A 40 20 Min. Max. 10 10 200 0.5 1.5 V V Units µA µA * Pulse Test: PW≤350µs, Duty Cycle≤2% hFE Classification Classification hFE1 R 40 ~ 80 O 60 ~ 120 Y 100 ~ 200 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD568/569 Typical Characteristics 1.0 IB = 18mA IB = 16mA 1000 VCE = 1V IC[A], COLLECTOR CURRENT 0.8 IB = 14mA IB = 12mA 0.6 IB = 10mA IB = 8mA hFE, DC CURRENT GAIN 100 0.4 IB = 6mA IB = 4mA 0.2 IB = 2mA 0.0 0...