KSD2012

KSD2012 KSD2012 Low Frequency Power Amplifier Complement to KSB1366 1 TO-220F 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 60 60 7 3 0.3 25 150 - 55 ~ 150 Units V V V A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO ICBO IEBO h FE1 hFE2 VCE(sat) VBE(on) fT Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Test Condition IC = 50mA, IB = 0 VCB = 60V, IE = 0 VEB = 7V, IC = 0 VCE = 5V, IC = 0.5A VCE = 5V, IC = 3A IC = 2A, IB = 0.2A VCE = 5V, IC = 0.5A VCE = 5V, IC = 0.5A 100 20 0.4 0.7 3 Min. 60 Typ. Max. 100 10 320 1 1 V V MHz Units V µA µA hFE Classification Classification hFE1 Y 100 ~ 200 G 150 ~ 320 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD2012 Typical Characteristics 4 Ic[A], COLLECTOR CURRENT 3 hFE, DC CURRENT GAIN mA 90 mA I B = = 80 IB IB = 70mA IB = 60mA IB = 50mA 1000 VCE = 5V 100 IB = 40mA 2 IB = 30mA IB = 20mA 10 1 IB = 10mA IB = 0mA 0 0 1 2 3 4 5 6 7 8 1 0.01 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURREN...