KSD1408

KSD1408 KSD1408 Power Amplifier Applications Complement to KSB1017 1 TO-220F 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 80 80 5 4 0.4 25 150 - 55 ~ 150 Units V V V A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO ICBO IEBO h FE1 hFE2 VCE(sat) VBE(on) fT Cob Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC = 50mA, IB = 0 VCB = 80V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 0.5A VCE = 5V, IC = 3A IC = 3A. IB = 0.3A VCE = 5V, IC = 3A VCE = 5V, IC = 0.5A VCB = 10V, f = 1MHz 40 15 50 0.45 1 8 90 1.5 1.5 V V MHz pF Min. 80 Typ. Max. 30 100 240 Units V µA µA hFE1 Classification Classification hFE1 R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD1408 Typical Characteristics 4.0 1000 I B= A A 0m 60mA 0m 20 1 24 I B= I B= 1 IB= 20m A IC[A], COLLECTOR CURRENT IB 0m = 10 A VCE = 5V 3.2 I B = 80 mA IB = 60mA 2.4 hFE, DC CURRENT GAIN 100 IB = 40mA 1.6 IB = 20mA 10 0.8 0.0 0 1 2 3 4 ...