KSD1273
KSD1273
High hFE, AF Power Amplifier
• ”Full PAK” Package for Simplified Mounting Only by a Screw, Requires no ...
KSD1273
KSD1273
High hFE, AF Power Amplifier
”Full PAK” Package for Simplified Mounting Only by a Screw, Requires no Insulator.
1
TO-220F 2.Collector 3.Emitter
1.Base
NPN Epitaxial Silicon
Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 80 60 6 3 6 1 2 40 150 - 55 ~ 150 Units V V V A A A W W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol BVCEO ICBO ICEO IEBO hFE VCE(sat) fT Parameter Collector-Emitter Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Test Condition IC = 25mA, IB = 0 VCB = 80V, IE = 0 VCE = 60V, IB = 0 VEB = 6V, IC = 0 VCE = 4V, IC = 0.5A IC = 2A, IB = 0.05A VCE = 12V, IC = 0.2A 30 500 Min. 60 Typ. Max. 100 100 100 2500 1 V MHz Units V µA µA µA
hFE Classification
Classification hFE Q 500 ~ 1000 P 800 ~ 1500 O 1200 ~ 2500
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSD1273
Typical Characteristics
2.0 1.8
10000
VCE = 4V IB = 1.2mA IB = 1mA IB = 800uA IB = 600uA IB = 400uA
Ic[A], COLLECTOR CURRENT
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 1 2 3 4 5 6 7
hFE, DC CURRENT GAIN
1000
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