KSD1221

KSD1221 KSD1221 Low Frequency Power Amplifier Low Collector-Emitter Saturation Voltage Complement to KSB906 1 I-PACK 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Value 60 60 7 3 0.5 20 1 150 - 55 ~ 150 Units V V V A A W W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(on) fT Cob tON tSTG tF Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Storage Time Fall Time Test Condition IC = 50mA, IB = 0 VCB = 60V, IE = 0 VEB = 7V, IC = 0 VCE = 5V, IC = 0.5A VCE = 5V, IC = 3A IC = 3A, IB = 0.3A IC = 5A, IC = 0.5A VCE = 5V, IC = 0.5A VCB = 10V, f = 1MHz VCC = 30V, IC = 1A IB1 = -IB2 = 0.2A RL = 30Ω 60 20 0.4 0.7 3 70 0.8 1.5 0.8 Min. 60 Typ. Max. 100 100 300 1 1 V V MHz pF µs µs µs Units V µA µA hFE Classification Classification hFE1 O 60 ~ 120 Y 100 ~ 200 G 150 ~ 300 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD1221 Typical Characteristics 4 1000 VCE = 5V IC[A], COLLECTOR...