KSD1021

KSD1021 KSD1021 Audio Frequency Power Amplifier Complement to KSB811 Collector Current : IC=1A Collector Dissipation : PC=350mW 1 TO-92S 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 40 30 5 1 350 150 -55 ~ 150 Units V V V A mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO hFE VCE (sat) VBE (sat) fT Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Band Width Product Output Capacitance Test Condition IC=100µA, IE=0 IC=10mA, IB=0 IE=100µA, IC=0 VCB=30V, IE=0 VCE=1V, IC=100mA IC=1A, IB=0.1A IC=1A, IB=0.1A VCE=6V, IC=10mA VCB=6V, IE=0, f=1MHz 130 16 70 Min. 40 30 5 0.1 400 0.5 1.2 V V MHz pF Typ. Max. Units V V V µA hFE Classification Classification hFE O 70 ~ 140 Y 120 ~ 240 G 200 ~ 400 ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSD1021 Typical Characteristics 1.0 0.9 1000 VCE = 1V IB = 5.0mA IB = 4.5mA IB = 4.0mA IB = 3.5mA IB = 3.0mA IC[A], COLLECTOR CURRENT 0.8 0.7 0.6 hFE, DC CURRENT GAIN 9 10 100 IB = 2.5mA 0.5 IB = 2....