KSC5504DT

KSC5504D/KSC5504DT KSC5504D/KSC5504DT D2-PAK High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time Two Package Choices : D2-PAK or TO-220 B Equivalent Circuit C 1 TO-220 E 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO V CEO VEBO IC ICP IB IBP PC TJ TSTG EAS Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) *Base Current (Pulse) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Avalanche Energy(Tj=25°C) Value 1200 600 12 4 8 2 4 75 150 - 65 ~ 150 3 Units V V V A A A A W °C °C mJ * Pulse Test : Pulse Width = 5ms, Duty Cycle ≤ 10% Thermal Characteristics TC=25°C unless otherwise noted Symbol Rθjc Rθja TL Thermal Resistance Characteristics Junction to Case Junction to Ambient Maximun Lead Temperature for Soldering Purpose : 1/8” from Case for 5 seconds Rating 1.65 62.5 270 °C Unit °C/W ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSC5504D/KSC5504DT Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICES ICEO IEBO hFE Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off ...