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KSC5345 Dataheets PDF



Part Number KSC5345
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description NPN Silicon Transistor
Datasheet KSC5345 DatasheetKSC5345 Datasheet (PDF)

KSC5345 KSC5345 High Voltage and High Reliability • High speed Switching • Wide Safe Operating Area 1 TO-220 2.Collector 3.Emitter 1.Base NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) *Base Current (Pulse) Power Dissipation(TC=25°C) Junction Te.

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KSC5345 KSC5345 High Voltage and High Reliability • High speed Switching • Wide Safe Operating Area 1 TO-220 2.Collector 3.Emitter 1.Base NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) *Base Current (Pulse) Power Dissipation(TC=25°C) Junction Temperature Storage Temperature Value 900 450 14 5 10 2 4 40 150 - 55 ~ 150 Units V V V A A A A W °C °C * Pulse Test: Pulse Width = 5ms, Duty Cycle≤10% Thermal Characteristics TC=25°C unless otherwise noted Symbol Rθjc Rθja Thermal Resistance Characteristics Junction to Case Junction to Ambient Rating 1.25 62.5 Unit °C/W ©2001 Fairchild Semiconductor Corporation Rev. A, October 2001 KSC5345 Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Cob fT tSTG tF tSTG tF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain bandwidth Product Storage Time Fall Time Storage Time Fall Time Test Condition IC = 500µA, IE = 0 IC = 5mA, IB = 0 IC =500µA, IE = 0 VCB = 800V, IE = 0 VEB = 14V, IC = 0 VCE = 5V, IC = 0.6A VCE = 5V, IC = 3A IC = 3A, IB = 0.6A IC = 3A, IB = 0.6A VCB = 10V, f = 1MHz VCE= 10V, IC = 0.6A VCC = 125V, IC = 1A IB1 = -IB2 = 0.2A VCC = 250V, IC = 4A IB1 = 0.8A, IB2 = -1.6A Min. 900 450 14 15 8 Typ. 65 14 6.5 0.3 3 0.3 µs 1 1.5 V V pF MHz µs Max. 10 10 Units V V V µA µA ©2001 Fairchild Semiconductor Corporation Rev. A, October 2001 KSC5345 Typical Characteristics 5 mA 700 I B= 100 IC[A], COLLECTOR CURRENT 4 3 A I B = 200m A I B = 100m hFE, DC CURRENT GAIN 00mA IB = 6 0mA I B = 50 0mA I B = 40 0mA I B = 30 VCE = 5V 10 2 1 0 0 2 4 6 8 10 1 0.01 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 1000 IC = 5 IB f = 1MHz IE = 0 1 VBE(sat) Cob[pF], CAPACITANCE 1 10 100 0.1 VCE(sat) 10 0.01 0.01 1 0.1 1 10 100 1000 IC[A], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 10 100 VCC=250V, 5IB1= -5IB2=IC IC[A], COLLECTOR CURRENT Pulse 10 tON, tSTG, tF [µs], TIME tSTG 1 50µs 0µ 10 DC s s 1m 1 ms 10 0.1 tF 0.1 0.01 0.1 0.01 1 10 1 10 100 1000 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Switching Time Figure 6. Safe Operating Area ©2001 Fairchild Semiconductor Corporation Rev. A, October 2001 KSC5345 Typical Characteristics (Continued) 100 80 IB2.


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