Document
KSC5345
KSC5345
High Voltage and High Reliability
• High speed Switching • Wide Safe Operating Area
1
TO-220 2.Collector 3.Emitter
1.Base
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) *Base Current (Pulse) Power Dissipation(TC=25°C) Junction Temperature Storage Temperature Value 900 450 14 5 10 2 4 40 150 - 55 ~ 150 Units V V V A A A A W °C °C
* Pulse Test: Pulse Width = 5ms, Duty Cycle≤10%
Thermal Characteristics TC=25°C unless otherwise noted
Symbol Rθjc Rθja Thermal Resistance Characteristics Junction to Case Junction to Ambient Rating 1.25 62.5 Unit °C/W
©2001 Fairchild Semiconductor Corporation
Rev. A, October 2001
KSC5345
Electrical Characteristics TC=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Cob fT tSTG tF tSTG tF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain bandwidth Product Storage Time Fall Time Storage Time Fall Time Test Condition IC = 500µA, IE = 0 IC = 5mA, IB = 0 IC =500µA, IE = 0 VCB = 800V, IE = 0 VEB = 14V, IC = 0 VCE = 5V, IC = 0.6A VCE = 5V, IC = 3A IC = 3A, IB = 0.6A IC = 3A, IB = 0.6A VCB = 10V, f = 1MHz VCE= 10V, IC = 0.6A VCC = 125V, IC = 1A IB1 = -IB2 = 0.2A VCC = 250V, IC = 4A IB1 = 0.8A, IB2 = -1.6A Min. 900 450 14 15 8 Typ. 65 14 6.5 0.3 3 0.3 µs 1 1.5 V V pF MHz µs Max. 10 10 Units V V V µA µA
©2001 Fairchild Semiconductor Corporation
Rev. A, October 2001
KSC5345
Typical Characteristics
5
mA 700 I B=
100
IC[A], COLLECTOR CURRENT
4
3
A I B = 200m
A I B = 100m
hFE, DC CURRENT GAIN
00mA IB = 6 0mA I B = 50 0mA I B = 40 0mA I B = 30
VCE = 5V
10
2
1
0 0 2 4 6 8 10
1 0.01
0.1
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10
1000
IC = 5 IB
f = 1MHz IE = 0
1
VBE(sat)
Cob[pF], CAPACITANCE
1 10
100
0.1
VCE(sat)
10
0.01 0.01
1 0.1 1 10 100 1000
IC[A], COLLECTOR CURRENT
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
10
100
VCC=250V, 5IB1= -5IB2=IC
IC[A], COLLECTOR CURRENT
Pulse
10
tON, tSTG, tF [µs], TIME
tSTG
1
50µs
0µ 10
DC
s
s 1m
1
ms 10
0.1
tF
0.1
0.01 0.1
0.01 1 10 1 10 100 1000
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Switching Time
Figure 6. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
Rev. A, October 2001
KSC5345
Typical Characteristics (Continued)
100
80
IB2.