KSC5054

KSC5054 KSC5054 High Speed High Voltage Switching Industrial Use NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IB IC ICP PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current (DC) *Collector Current (Pulse) Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 1 I-PAK 1. Base 2. Collector 3. Emitter Value 500 400 7 0.25 0.5 1 1 10 150 - 55 ~ 150 Units V V V A A A W W °C °C * PW≤300µs, Duty Cycle≤10% Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) VCEX(sus)1 VCEX(sus)2 ICBO ICER IEBO ICEX1 ICEX2 hFE1 hFE2 VCE(sat) VBE(sat) tON tSTG tF Parameter Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Collector Cut-off Current Test Condition IC = 0.3A, IB1 = 0.06A, L = 10mH IC = 0.3A, IB1 = -IB2 = 0.06A VBE(off) = -5V, L = 10mH IC = 0.6A, IB1 = 0.2, L = 10mH IB2 = -0.06, VBE(off) = -5V VCB = 400V, IE = 0 VCE = 400V, RBE = 51Ω, TC = 125°C VEB = 5V, IC = 0 VCE = 400V, VBE (off) = -1.5V VCE = 400V, VBE (off) = -1.5V @ TC = 125°C VCE = 5V, IC = 0.05A VCE = 5V, IC = 0.3A IC = 0.3A, IB = 0.06A IC = 0.3A, IB = 0.06A VCC = 150V, IC = 0.3A IB1 = -IB2 = 0.06A, RL = 500Ω PW = 50µs, Duty Cycle≤2% 20 10 Min. 400 450 400 10 1 10 10 1 80 1 1.2 1 ...