KSC5042

KSC5042 KSC5042 High Voltage Switchihg Dynamic Focus Application High Collector-Emitter Breakdown Voltage : BVCEO=900V Small Cob =2.8pF(Typ.) Wide S.O.A High reliability 1 TO-220 2.Collector 3.Emitter 1.Base NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 1500 900 5 100 300 10 150 - 55 ~ 150 Units V V V mA mA W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE(sat) Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter Saturation Voltage Output Capacitance Test Condition IC=1mA, IE = 0 IC=5mA, IB = 0 IE=1mA, IC = 0 VCB=900V, IE = 0 VEB=4V, IC = 0 VCE=5V, IC = 10mA IC=20mA, IB = 4mA IC=20mA, IB = 4mA VCB=100V, f = 1MHz 2.8 30 5 2 V V pF Min. 1500 900 5 10 10 Typ. Max. Units V V V µA µA * Pulse test: PW = 300µs, Duty Cycle = 2% pulsed ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSC5042 Typical Characteristics 100 IB = 10mA 90 IB = 9mA IB = 8mA IB = 7mA VCE = 5V IB = 6mA IB = 5mA IB = 4mA IB = 3mA IB =...