KSC3265

KSC3265 KSC3265 Low Frequency Amplifier Complement to KSA1298 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Value 30 25 5 800 160 200 150 -55 ~ 150 Units V V V mA mA mW °C °C ∗ Refer to KSD261 for graphs Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE (sat) VBE (on) fT Parameter Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC=10mA, IB=0 IE=1mA, IC=0 VCB=30V, IE=0 VEB=5V, IC=0 VCE=1V, IC=100mA VCE=6V, IC=800mA IC=500mA, IB=20mA VCE=1V, IC=10mA VCE=5V, IC=10mA VCB=10V, IE=0, f=1MHz 0.5 120 13 100 40 Min. 25 5 100 100 320 0.4 0.8 V V MHz pF Typ. Max. Units V V nA nA Cob hFE Classification Classification hFE O 100 ~ 200 Marking Y 160 ~ 320 K1O hFE grade ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC3265 Package Dimensions SOT-23 0.20 MIN 2.40 ±0.10 0.40 ±0.03 1.30 ±0.10 0.45~0.60 0.03~0.10 0.38 REF 0.40 ±0.03 0.96~1.14 2.90 ±0.10 0.12 –0.023 +0.05 0.95 ±0.03 0.95 ±0.03 1...