KSC2982

KSC2982 KSC2982 Strobe Flash & Medium Power Amplifier Excellent hFE Linearity : hFE1=140 ~ 600 Low Collector-Emitter Saturation Voltage : VCE(sat)=0.5V Collector Dissipation : PC=1~2W in Mounted on Ceramic Board 1 SOT-89 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCES VCEO VEBO IC ICP IB IBP PC PC* TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current (DC) * Collector Current (Pulse) Base Current (DC) * Base Current (Pulse) Collector Power Dissipation Junction Temperature Storage Temperature Value 30 30 10 6 2 4 0.4 0.8 500 1,000 150 -55 ~ 150 Units V V V V A A A A mW mW °C °C * PW≤10ms, Duty Cycle≤30% Mounted on Ceramic Board (250mm2x0.8mm) Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE (sat) VBE (on) fT Parameter Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC=10mA, IB=0 IE=1mA, IC=0 VCB=30V, IE=0 VBE=6V, IC=0 VCE=1V, IC=0.5A VCE=1V, IC=2A IC=2A, IB=50mA VCE=1V, IC=2A VCE=1V, IC=2A VCB=10V, IE=0, f=1MHz 140 70 140 0.2 0.86 150 27 0.5 1.5 V V MHz pF Min. 10 6 100 100 600 Typ. Max. Units V V nA nA Cob hFE1 Classification Classificatio...