KSC2881

KSC2881 KSC2881 Power Amplifier Collector-Emitter Voltage : VCEO=120V Current Gain Bandwidth Productor : fT=120MHz Collector Dissipation : PC=1~2W in Mounted on Ceramic Board Complement to KSA1201 1 SOT-89 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC PC* TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Value 120 120 5 800 160 500 1,000 150 -55 ~ 150 Units V V V mA mA mW mW °C °C * Mounted on Ceramic Board (250mm2x0.8mm) Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (on) fT Parameter Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC=10µA, IB=0 IE=1mA, IC=0 VCB=120V, IE=0 VBE=5V, IC=0 VCE=5V, IC=100mA IC=500mA, IB=50mA VCE=5V, IC=500mA VCE=5V, IC=100mA VCB=10V, IE=0, f=1MHz 120 30 80 Min. 120 5 100 100 240 1.0 1.0 V V MHz pF Typ. Max. Units V V nA nA Cob hFE Classification Classification hFE O 80 ~ 160 Marking Y 120 ~ 240 SCX hFE grade ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC2881 Typical Characteristics 0.8 1.0 IB = 50mA...