KSC2752

KSC2752 KSC2752 High Speed High Voltage Swiching Industrial Use NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current (DC) ICP *Collector Current (Pulse) IB Base Current (DC) PC Collector Dissipation (Ta=25°C) PC Collector Dissipation (TC=25°C) TJ Junction Temperature TSTG Storage Temperature * PW≤300µs, Duty Cycle≤10% 1 TO-126 1. Emitter 2.Collector 3.Base Value 500 400 7 0.5 1 0.25 1 10 150 - 55 ~ 150 Units V V V A A A W W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition VCEO(sus) VCEX(sus)1 Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage VCEX(sus)2 Collector-Emitter Sustaining Voltage ICBO ICER ICEX1 ICEX2 Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current IEBO Emitter Cut-off Current hFE1 hFE2 * DC Current Gain VCE(sat) * Collector-Emitter Saturation Voltage VBE(sat) * Base-Emitter Saturation Voltage tON Turn ON Time tSTG Storage Time tF Fall Time * Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed IC = 0.3A, IB1 = 0.06A, L = 10mH IC = 0.3A, IB1 = -IB2 = 0.06A VBE(off) = -5V, L =10mH, Clamped IC = 0.6A, IB1 = 0.2A, IB2 = -0.06A VBE(off) = -5V, L = 10mH, Clamped VCB = 400V, IE = 0 VCE = 400V, RBE = 51Ω, TC= 125°C VCE = 400V, RBE(off) = -1.5V VCE ...