KSC2715

KSC2715 KSC2715 FM RADIO AMP, MIX, CONV, OSC, IF AMP 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 35 30 4 50 150 150 -55 ~ 150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol ICBO IEBO hFE VCE (sat) VBE (on) fT Cob Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition VCB=35V, IE=0 VEB=4V, IC=0 VCE=12V, IC=2mA IC=10mA, IB=1mA IC=10mA, IB=1mA VCE=10V, IC=1mA VCB=10V, IE=0, f=1MHz 100 2 40 Min. Typ. Max. 0.1 1 240 0.4 1.0 400 3.2 V V MHz pF Units µA µA hFE Classification Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 Marking B1 O hFE grade ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC2715 Typical Characteristics 10 IB = 90µA IB = 80µA 1000 VCE=12V IC[mA], COLLECTOR CURRENT 8 6 IB = 60µA IB = 50µA hFE, DC CURRENT GAIN IB = 70µA 100 4 IB = 40µA IB = 30µA 2 IB = 20µA IB = 10µA 0 0 2 4 6 8 10 10 0.1 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(s...