KSC2335F

KSC2335F KSC2335F High Speed, High Voltage Switching Industrial Use NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 1 TO-220F 2.Collector 3.Emitter 1.Base Value 500 400 7 7 15 3.5 40 150 - 55 ~ 150 Units V V V A A A W °C °C * PW≤300µs, Duty Cycle≤10% Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) VCEX(sus)1 VCEX(sus)2 ICBO ICER ICEX1 ICEX2 IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(sat) tON tSTG tF Parameter Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current * DC Current Gain Test Condition IC=3A, IB1=0.6A, L = 1mH IC=3A,IB1=-IB2=0.6A VBE(off)=-5V, L = 180µH, Clamped IC=6A, IB1=2A, IB2=-0.6A VBE(off)=-5V, L = 180µH, Clamped VCE=400V, IE = 0 VCE=400V, RBE = 51Ω @ TC = 125°C VCE=400V, VBE (off) = -1.5V VCE=400V, VBE(off) = -1.5V @ Ta=125°C VEB=5V, IC = 0 VCE=5V, IC = 0.1A VCE=5V, IC = 1A VCE=5V, IC=3A IC=3A, IB=0.6A IC=3A, IB=0.6A VCC=150V, IC=3A IB1=-IB2=0.6A RL=50Ω 20 20 10 Min. 400 450 400 10 1 10 1 10 80 1 1.2 1 2.5 1 V V µs µs µs Max. Units V V V µA mA µA mA µA * C...