KSC2334

KSC2334 KSC2334 High Speed Switching Industrial Use Complement to KSA1010 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) Collector Dissipation (TC=25°C) Collector Dissipation (TA=25°C) Junction Temperature Storage Temperature 1 TO-220 2.Collector Value 150 100 7 7 15 3.5 40 1.5 150 - 55 ~ 150 3.Emitter Units V V V A A A W W °C °C 1.Base * PW≤300µs, Duty Cycle≤10% Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) VCEX(sus)1 VCEX(sus)2 ICBO ICER ICEX1 ICEX2 IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(sat) tON tSTG tF Parameter Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Test Condition IC = 5A, IB1= 0.5A, L = 1mH IC = 5A, IB1 = -IB2 = 0.5A VBE(off) = -5V, L = 180µH, Clamped IC = 10A, IB1 =1A, IB2 = -0.5A, VBE(off) = -5V, L = 180µH, Clamped VCB = 100, IE = 0 VCE = 100V, RBE = 51Ω@TC =125°C VCE = 100V, VBE(off) = -1.5V VCE = 100V, VBE(off) = -1.5V @ TC= 125°C VEB = 5V, IC = 0 VCE = 5V, IC = 0.5A VCE = 5V, IC = 3A VCE = 5V, IC = 5A IC = 5A, IB = 0.5A IC = 5A, IB = 0.5A VCC = 50V, IC = 5A IB1 = -IB2 = 0.5A RL = 10Ω 40 40 20 Min. 100 100 100 10 1 10 1 10 240 0.6 1.5 0.5 0.5 1.5 V V µs µs µs...