KSC2233

KSC2233 KSC2233 B/W TV Horizontal Deflection Output Collector-Base Voltage : VCBO = 200V Collector Current (DC) : IC = 4A Collector Dissipation : PC = 40W 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 200 60 5 4 40 150 -55 ~ +150 Units V V V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO hFE1 hFE2 VCE(sat) VBE(sat) fT Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Test Condition IC = 1mA, IE = 0 IC = 20mA, IB =0 IE = 1mA, IC = 0 VCB = 170V, IE = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 4A IC = 4A, IB = 0.4A IC = 4A, IB = 0.4A VCE = 5V, IC = 0.5A 10 30 20 40 1 1.5 V V MHz Min. 200 60 5 10 150 Typ. Max. Units V V V µA ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC2233 Typical Characteristics 5 VCE = 5V IC[A], COLLECTOR CURRENT 4 3 IB = 30 mA IB = 25 mA 2 IB = 20 mA IB = 15 mA hFE, DC CURRENT GAIN IB = 50 mA IB = 45 mA IB = 40 mA IB = 35 mA 1000 100 1 IB = 10 mA IB = 5 mA 0 0 4 8 12 16 20 10 ...