KSC1623GMTF

KSC1623 KSC1623 Low Frequency Amplifier & High Frequency OSC. Complement to KSA812 2 1 3 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 60 50 5 100 200 150 -55 ~ 150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol ICBO IEBO hFE VCE (sat) VBE (sat) VBE (on) fT Cob Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition VCB=60V, IE=0 VEB=5V, IC=0 VCE=6V, IC=1mA IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=6V, IC=1mA VCE=6V, IC=10mA VCB=6V, IE=0, f=1MHz 0.55 90 200 0.15 0.86 0.62 250 3 Min. Typ. Max. 0.1 0.1 600 0.3 1.0 0.65 V V V MHz pF Units µA µA hFE Classification Classification hFE O 90 ~ 180 Y 135 ~ 270 G 200 ~ 400 L 300 ~ 600 Marking C1 O hFE grade ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC1623 Typical Characteristics 100 90 100 VCE = 6V IB = 400µA IB = 300µA IB = 250µA IB = 200µA IB = 150µA IB = 100µA IB = 50µA 80 70 60 50 40 30 20 10 0 0 4 8 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT IB = 350µA 10 1 12 16 20 0....