Document
KSC1187
KSC1187
TV 1st, 2nd Picture IF Amplifier (Forward AGC)
• High Current Gain Bandwidth Product : fT=700MHz • High Power Gain : GPE=24dB (TYP.) at f=45MHz
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 30 20 4 30 250 150 -55 ~ 150 Units V V V mA mW °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO hFE fT CRE GPE VAGC Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Current Gain Bandwidth Product Reverse Transfer Capacitance Power Gain AGC Voltage Test Condition IC=10µA, IE=0 IC=5mA, IB=0 IE=10µA, IC=0 VCB=20V, IE=0 VCE=10V, IC=2mA VCE=10V, IC=3mA VCB=10V, IE=0, f=1MHz VCE=10V, IC=3mA f=45MHz GR= 30dB, f=45MHz 20 4.4 40 400 700 0.6 24 5.2 6.0 Min. 30 25 4 0.1 240 MHz pF dB V Typ. Max. Units V V V µA
hFE Classification
Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSC1187
Typical Characteristics
10
1000
VCE = 10V
IC[mA], COLLECTOR CURRENT
8
IB = 100uA
hFE, DC CURRENT GAIN
10
IB = 90uA IB = 80uA IB = 70uA
6
100
IB = 60uA IB = 50uA
4
IB = 40uA IB = 30uA
10
2
IB = 20uA IB = 10uA
0 0 2 4 6 8
1 0.1
1
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10
IC=10IB
f=1MHz IE =0
1
1
VBE(sat)
V CE(sat)
0.1
Cre[pF], CAPACITANCE
0.1 1
0.01 0.01
0.1
1
10
10
100
IC[mA], COLLECTOR CURRENT
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Figure 4. Reverse Capacitance
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
VCE=10V
1000
100 0.1
1
10
IC[mA], COLLECTOR CURRENT
Figure 5. Current Gain Bandwidth Product
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSC1187
Package Demensions
TO-92
4.58 –0.15
+0.25
0.46
14.47 ±0.40
±0.10
4.58 ±0.20
1.27TYP [1.27 ±0.20] 3.60
±0.20
1.27TYP [1.27 ±0.20]
0.38 –0.05
+0.10
3.86MAX
1.02 ±0.10
0.38 –0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER™ FAST® OPTOPLANAR™
ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™
FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™
PACMAN™ POP™ Power247™ PowerTrench® QFET™ Q.