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KSC1187 Dataheets PDF



Part Number KSC1187
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description NPN Epitaxial Silicon Transistor
Datasheet KSC1187 DatasheetKSC1187 Datasheet (PDF)

KSC1187 KSC1187 TV 1st, 2nd Picture IF Amplifier (Forward AGC) • High Current Gain Bandwidth Product : fT=700MHz • High Power Gain : GPE=24dB (TYP.) at f=45MHz 1 TO-92 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Rat.

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KSC1187 KSC1187 TV 1st, 2nd Picture IF Amplifier (Forward AGC) • High Current Gain Bandwidth Product : fT=700MHz • High Power Gain : GPE=24dB (TYP.) at f=45MHz 1 TO-92 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 30 20 4 30 250 150 -55 ~ 150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO hFE fT CRE GPE VAGC Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Current Gain Bandwidth Product Reverse Transfer Capacitance Power Gain AGC Voltage Test Condition IC=10µA, IE=0 IC=5mA, IB=0 IE=10µA, IC=0 VCB=20V, IE=0 VCE=10V, IC=2mA VCE=10V, IC=3mA VCB=10V, IE=0, f=1MHz VCE=10V, IC=3mA f=45MHz GR= 30dB, f=45MHz 20 4.4 40 400 700 0.6 24 5.2 6.0 Min. 30 25 4 0.1 240 MHz pF dB V Typ. Max. Units V V V µA hFE Classification Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSC1187 Typical Characteristics 10 1000 VCE = 10V IC[mA], COLLECTOR CURRENT 8 IB = 100uA hFE, DC CURRENT GAIN 10 IB = 90uA IB = 80uA IB = 70uA 6 100 IB = 60uA IB = 50uA 4 IB = 40uA IB = 30uA 10 2 IB = 20uA IB = 10uA 0 0 2 4 6 8 1 0.1 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 IC=10IB f=1MHz IE =0 1 1 VBE(sat) V CE(sat) 0.1 Cre[pF], CAPACITANCE 0.1 1 0.01 0.01 0.1 1 10 10 100 IC[mA], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Reverse Capacitance fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT VCE=10V 1000 100 0.1 1 10 IC[mA], COLLECTOR CURRENT Figure 5. Current Gain Bandwidth Product ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSC1187 Package Demensions TO-92 4.58 –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 –0.05 +0.10 3.86MAX 1.02 ±0.10 0.38 –0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER™ FAST® OPTOPLANAR™ ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ Q.


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