KSB810

KSB810 KSB810 Audio Frequency Amplifier Complement to KSD1020 1 TO-92S 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) * Collector Current (Pulse) Collector Power Dissipation Junction Temperature Storage Temperature Ratings -30 -25 -5.0 -700 -1.0 350 150 -55 ~ 150 Units V V V mA A mW °C °C * PW≤10ms, Duty cycle≤50% Electrical Characteristics Ta=25°C unless otherwise noted Symbol ICBO IEBO hFE1 hFE2 VBE (on) VCE (sat) VBE (sat) Cob fT Parameter Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Base-Emitter on Voltage * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Test Condition VCB= -30V, IE=0 VEB= -5V, IC=0 VCE= -1V, IC= -100mA VCE= -1V, IC= -700mA VCE= -6V, IC= -10mA IC= -700mA, IB= -70mA IC= -700mA, IB= -70mA VCB= -6V, IE=0, f=1MHz VCE= -6V, IC=-10mA 50 70 35 -600 200 100 -640 -0.25 -0.95 17 160 Min. Typ. Max. -100 -100 400 -700 -0.4 -1.2 40 mV V V pF MHz Units nA nA * Pulse Test: PW≤350µs, Duty cycle≤2% hFE Classification Classification hFE1 O 70 ~ 140 Y 120 ~ 240 G 200 ~ 400 ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSB810 Typical Characteristics -50 1000 IB = -250µ A VCE= -1V IC[mA], COLLECTOR CURRENT -40 -30 IB = -150µ A h...