KSB795

KSB794/795 KSB794/795 Audio Frequency Power Amplifier Low Speed Switching Industrial Use 1 TO-126 2.Collector 3.Base 1. Emitter PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Volage : KSB794 : KSB795 VCEO Collector-Emitter Volage : KSB794 : KSB795 VEBO IC ICP IB PC PC TJ TSTG Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature - 60 - 80 -8 - 1.5 -3 - 0.15 1 10 150 - 55 ~ 150 V V V A A A W W °C °C R1.= 10 kΩ R2.= 500Ω Value - 60 - 80 Units V V * PW≤300µs, Duty Cycle≤10% Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO ICER ICEX1 ICEX2 IEBO hFE1 hFE2 VCE(sat) VBE(sat) Parameter Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Test Condition VCB = - 60V, IE = 0 VCE = - 60V, RBE = 51Ω @ TC= 125°C VCE = - 60V, VBE (off) = 1.5V VCE = - 60V, VBE (off) = 1.5V @ TC= 125°C VEB = - 5V, IC = 0 VCE = - 2V, IC = - 0.5A VCE = - 2V, IC = - 1A IC = - 1A, IB = - 1mA IC = - 1A, IB = - 1mA 1000 2000 Min. Max. - 10 -1 - 10 -1 -1 30000 -1.5 -2 V V Units µA mA µA mA mA * Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed. hFE Classificntion Classification hFE2 R 2000 ~ 5000 O 4000...