KSB546

KSB546 KSB546 TV Vertical Deflection Output Collector-Base Voltage : VCBO = -200V Collector Current : lC = -2A Collector Dissipation : PC= 25W (TC=25°C) Complement to KSD401 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC)Y Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value - 200 - 150 -5 -2 25 150 - 55 ~ 150 Units V V V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO hFE VCE(sat) fT Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Test Condition IC = - 500µA, IE = 0 IC = - 10mA, IB = 0 IE = - 500uA, IC = 0 VCB = - 150V, IE = 0 VCE = - 10V, IE = - 0.4A IC = - 500mA, IB = - 50mA VCE = - 10V, IC = - 0.4A 5 40 Min. - 200 - 150 -5 - 50 240 -1 V MHz Typ. Max. Units V V V µA hFE Classification Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSB546 Typical Characteristics -1.0 -0.9 1000 VCE = -10V IC[A], COLLECTOR CURRENT -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 -0.0 -0 IB = -8mA IB = -6mA IB = -5mA IB = -4mA IB = -3mA IB = -2mA IB = ...