KSB1151

KSB1151 KSB1151 Feature Low Collector-Emitter Saturation Voltage Large Collector Current High Power Dissipation : PC=1.3W (Ta=25°C) Complement to KSD 1691 1 TO-126 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current (DC) ICP *Collector Current (Pulse) IB Base Current PC Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) TJ Junction Temperature TSTG Storage Temperature * PW≤10ms, Duty Cycle≤50% Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition ICBO Collector Cut-off Current IEBO Emitter Cut-off Current hFE1 hFE2 hFE3 * DC Current Gain VCE(sat) * Collector-Emitter Saturation Voltage VBE(sat) * Base-Emitter Saturation Voltage tON Turn On Time tSTG Storage Time tF Fall Time * Pulse test: PW≤350µs, Duty Cycle≤2% Pulsed VCB = - 50V, IE = 0 VEB = - 7V, IC = 0 VCE = - 1V, IC = - 0.1A VCE = - 1V, IC = - 2A VCE = - 2V, IC = - 5A IC = - 2A, IB = - 0.2A IC = - 2A, IB = - 0.2A VCC = - 10V, IC = - 2A IB1 = - IB2 =0.2A RL = 5Ω hFE Classification Classification hFE2 O 100 ~ 200 Y 160 ~ 320 Value - 60 - 60 -7 -5 -8 -1 1.3 20 150 - 55 ~ 150 Units V V V A A A W W °C °C Min. 60 100 50 Typ. 200 - 0.14 - 0.9 0.15 0.78 0.18 Max. - 10 - 10 400 - 0.3 - 1.2 1 2.5 1 Units µA µA V V µs µs µs G 200 ~...