KSB1121

KSB1121 KSB1121 High Current Driver Applications Low Collector-Emitter Saturation Voltage Large Current Capacity and Wide SOA Fast Switching Speed Complement to KSD1621 1 SOT-89 1. Base 2. Collector 3. Emitter PNP Epitaxial Planar Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC PC* TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -30 -25 -6 -2 500 1.3 150 -55 ~ 150 Units V V V A mW W °C °C * Mounted on Ceramic Board (250mm2 x 0.8mm) Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE (sat) VBE (sat) fT Cob tON tSTG tF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance * Turn On Time * Storage Time * Fall time Test Condition IC= -10µA, IE= 0 IC= -1mA, IB= 0 IE= -10µA, IC= 0 VCB= -20V, IE=0 VBE= -4V, IC= 0 VCE= -2V, IC= -0.1A VCE= -2V, IC= -1.5A IC= -1.5A, IB= -75mA IC= -1.5A, IB= -75mA VCE= -10V, IC= -50mA VCB= -10V, IE=0, f=1MHz VCC= -12V, VBE = -5V IB1=-IB2=-25mA IC= -500mA, RL=24Ω 100 65 -0.35 -0.85 150 32 60 350 25 Min. -30 -25 -6 -100 -100 560 -0.6 -1.2 V V MHz pF ns ns ns Typ. M...