KSB1116A

KSB1116/1116A KSB1116/1116A Audio Frequency Power Amplifier & Medium Speed Switching Complement to KSD1616/1616A 1 TO-92 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) * Collector Current (Pulse) Collector Power Dissipation Junction Temperature Storage Temperature : KSB1116 : KSB1116A : KSB1116 : KSB1116A Ratings -60 -80 -50 -60 -6 -1 -2 0.75 150 -55 ~ 150 Units V V V V V A A W °C °C * PW≤10ms, Duty Cycle≤50% Electrical Characteristics Ta=25°C unless otherwise noted Symbol ICBO IEBO hFE1 hFE2 VBE (on) VCE (sat) VBE (sat) Cob fT tON tSTG tF * Base-Emitter On Voltage * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn On Time Storage Time Fall Time Parameter Collector Cut-off Current Emitter Cut-off Current * DC Current Gain : KSB1116 : KSB1116A Test Condition VCB= -60V, IE=0 VEB= -6V, IC= 0 VCE= -2V, IC= -100mA VCE= -2V, IC = -1A VCE= -2V, IC= -50mA IC= -1A, IB= -50mA IC= -1A, IB= -50mA VCB= -10V, IE=0, f=1MHz VCE= -2V, IC= -100mA VCC= -10V, IC= -100mA IB1= -IB2= -10mA VBE (off)= 2~3V 70 135 135 81 -600 -650 -0.2 -0.9 25 120 0.07 0.7 0.07 Min. Typ. Max. -100 -100 600 400 -700 -0.3 -1.2 mV V V pF MHz µs µs µs Units nA nA * Pulse Test: PW ≤350µs, Duty Cycle≤2% hFE Classification C...