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KBU4D

Fairchild Semiconductor

4.0 Ampere Silicon Bridge Rectifiers

KBU4A - KBU4M Discrete POWER & Signal Technologies KBU4A - KBU4M 0.935(23.7) 0.895(22.7) 0.16(4.1) 0.14(3.6) 0.085(2.2...


Fairchild Semiconductor

KBU4D

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KBU4A - KBU4M Discrete POWER & Signal Technologies KBU4A - KBU4M 0.935(23.7) 0.895(22.7) 0.16(4.1) 0.14(3.6) 0.085(2.2) 0.280(7.1) 0.260(6.6) Features High surge current capability. Reliable construction technique. Ideal for printed circuit board. 0.70(17.8) 0.66(16.8) 0.0760(19.3) MAX 0.065(1.7) 45 ° + + 0.455(11.3) – ~ ~ + 0.405(10.3) 0.165(4.2) 0.150(3.8) KBU 1.0(2.54) MIN 0.260(6.8) 0.180(4.5) 0.220(5.6) 4.0 Ampere Silicon Bridge Rectifiers Absolute Maximum Ratings* Symbol IO if(surge) PD RθJA RθJL Tstg TJ Average Rectified Current @ TA = 50°C Peak Forward Surge Current Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient,** per leg Thermal Resistance, Junction to Lead,** per leg Storage Temperature Range Operating Junction Temperature TA = 25°C unless otherwise noted 0.180(4.6) 0.052(1.3) 0.048(1.2) Dimensions are in: inches (mm) Parameter Value 4.0 200 6.6 53 19 4.0 -55 to +150 -55 to +150 Units A A W mW/°C °C/W °C/W °C °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. **Device mounted on PCB with 0.375 " (9.5 mm) lead length and 0.5 x 0.5" (13 x 13 mm) copper pads. Electrical Characteristics Parameter 4A Peak Repetitive Reverse Voltage Maximum RMS Bridge Input Voltage DC Reverse Voltage (Rated VR) Maximum Reverse Leakage, total bridge @ rated VR TA = 25°C TA = 100°C Maximum Forward Voltage Drop, per bridge @ 4.0 A 50 35 50 TA = 25°C unless otherwis...




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