4M x 16bit CMOS Dynamic RAM with Fast Page Mode
KM416V4000C, KM416V4100C
CMOS DRAM
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 4,1...
Description
KM416V4000C, KM416V4100C
CMOS DRAM
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability.
FEATURES
Part Identification - KM416V4000C/C-L(3.3V, 8K Ref.) - KM416V4100C/C-L(3.3V, 4K Ref.) Active Power Dissipation Unit : mW Speed -45 -5 -6 8K 324 288 252 4K 468 432 396
Fast Page Mode operation 2CAS Byte/Word Read/Write operation CAS-before-RAS refresh capability RAS-only and Hidden refresh capability Self-refresh capability (L-ver only) Fast parallel test mode capability LVTTL(3.3V) compatible inputs and outputs Early Write or output enable controlled write JEDEC Standard pinout Available in Plastic TSOP(II) packages +3.3V±0.3V power supply
Refresh Cycles Part NO. KM416V4000C* KM416V4100C Refresh cycle 8K 4K Refresh time Normal 64ms L-ver 128ms
RAS UCAS LCAS W Control Clocks Vcc Vss Lower Data in Buffer Sense Amps & I/O Lower Data out Buffe...
Similar Datasheet