KM416C4004C

KM416C4004C, KM416C4104C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-5 or -6) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx16 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability. FEATURES Part Identification - KM416C4004C(5.0V, 8K Ref.) - KM416C4104C(5.0V, 4K Ref.) Extended Data Out Mode operation 2 CAS Byte/Word Read/Write operation CAS-before-RAS refresh capability RAS-only and Hidden refresh capability Fast parallel test mode capability TTL(5.0V) compatible inputs and outputs Early Write or output enable controlled write Unit : mW JEDEC Standard pinout Available in Plastic TSOP(II) package +5.0V±10% power supply Active Power Dissipation Speed -5 -6 8K 495 440 4K 660 605 Refresh Cycles Part NO. KM416C4004C* KM416C4104C Refresh cycle 8K 4K Refresh time Normal 64ms RAS UCAS LCAS W Control Clocks VBB Generator Vcc Vss Lower Data in Buffer Sense Amps & I/O Lower Data out Buffer Upper Data in Buffer Upper Data out Buffer FUNCTIONAL BLOCK DIAGRAM * Access mode & RAS only refresh mode : 8K cycle/64ms CAS-before-RAS & Hid...