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KM23C64000T

Samsung semiconductor

64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM

KM23C64000T 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM FEATURES • Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x ...


Samsung semiconductor

KM23C64000T

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Description
KM23C64000T 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM FEATURES Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode) Fast access time : 120ns(Max.) Supply voltage : single +5V Current consumption Operating : 70mA(Max.) Standby : 50µ A(Max.) Fully static operation All inputs and outputs TTL compatible Three state outputs Package : KM23C64000T : 44-TSOP2-400 CMOS MASK ROM GENERAL DESCRIPTION The KM23C64000T is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 8,388,608 x 8 bit(byte mode) or as 4,194,304 x 16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device operates with a 5V single power supply, and all inputs and outputs are TTL compatible. Because of its asynchronous operation, it requires no external clock assuring extremely easy operation. It is suitable for use in program memory of microprocessor, and data memory, character generator. The KM23C64000T is packaged in a 44-TSOP2. FUNCTIONAL BLOCK DIAGRAM A21 . . . . . . . . A0 A-1 . . . CE OE BHE CONTROL LOGIC Q0/Q8 Q7/Q 15 X BUFFERS AND DECODER MEMORY CELL MATRIX (4,194,304x16/ 8,388,608x8) PIN CONFIGURATION A21 A18 A17 A7 A6 A5 1 2 3 4 5 6 7 8 9 11 44 A20 43 A19 42 A8 41 A9 40 A10 39 A11 38 A12 37 A13 36 A14 35 A15 Y BUFFERS AND DECODER SENSE AMP. BUFFERS A4 A3 A2 A0 A1 10 TSOP2 34 A16 33 BHE 32 VSS 31 Q15/A-1 30 Q7 29 Q14 28 Q6 27 Q13 26 Q5 25 Q12 24 Q4 23 VCC CE 12 VSS 13 OE...




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