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6N139

Toshiba Semiconductor

IRED PHOTO

TOSHIBA Photocoupler GaAℓAs Ired & Photo IC 6N138, 6N139 6N138,6N139 Current Loop Driver Low Input Current Line Receiv...


Toshiba Semiconductor

6N139

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Description
TOSHIBA Photocoupler GaAℓAs Ired & Photo IC 6N138, 6N139 6N138,6N139 Current Loop Driver Low Input Current Line Receiver CMOS Logic Interface The TOSHIBA 6N138 and 6N139 consists of a GaAℓAs infrared emitting diode coupled with a split-Darlington output configuration. A high speed GaAℓAs Ired manufactured with an unique LPE junction, has the virtue of fast rise and fall time at low drive current. Isolation voltage: 2500 Vrms (min) Current transfer ratio : 6N138 − 300% (min) (IF=1.6mA) : 6N139 − 400% (min) (IF=0.5mA) Switching time: 6N138 − tPHL = 10μs (max) − tPLH = 35μs (max) 6N139 − tPHL = 1μs (max) − tPLH = 7μs (max) UL recognized: UL1577, file no. E67349 Unit: mm Pin Configuration (top view) 1 : N.C. 1 8 2 : Anode 3 : Cathode 2 7 4 : N.C. 5 : Gnd 3 6 6 : O utput 7 : O utput Base 8 : VCC 45 TOSHIBA 11−10C4 Weight: 0.54 g (typ.) Schematic 2 + IF VF - 3 VCC 8 IC C IO 6 VO IB 7 VB 5 GND Start of commercial production 1988/02 1 2014-09-01 Absolute Maximum Ratings (*) (Ta = 0°C to + 70°C) 6N138,6N139 Characteristic Symbol Rating Unit Detector LED Forward current Pulse forward current Total pulse forward current Reverse voltage Diode power dissipation Output current Emitter−base reverse voltage Supply voltage Output voltage Output power dissipation Operating temperature range Storage temperature range Lead solder temperature (10s) (*4) Isolation voltage (1minute, R.H.≤ 60%) (Note 1) (Note 2) (Note 3) (Note 4) IF IFP(*1) IFP(*2) VR PD IO VE...




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