DatasheetsPDF.com

6MBI50S-120 Dataheets PDF



Part Number 6MBI50S-120
Manufacturers Fuji Electric
Logo Fuji Electric
Description IGBT(1200V/50A)
Datasheet 6MBI50S-120 Datasheet6MBI50S-120 Datasheet (PDF)

6MBI50S-120 IGBT MODULE ( S series) 1200V / 50A 6 in one-package Features · Compact package · P.C.board mount · Low VCE(sat) IGBT Modules Applications · Inverter for motor drive · AC and DC servo drive amplifier · Uninterruptible power supply · Industrial machines, such as welding machines Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector Continuous Tc=25°C current Tc=80°C 1ms Tc=25°C.

  6MBI50S-120   6MBI50S-120



Document
6MBI50S-120 IGBT MODULE ( S series) 1200V / 50A 6 in one-package Features · Compact package · P.C.board mount · Low VCE(sat) IGBT Modules Applications · Inverter for motor drive · AC and DC servo drive amplifier · Uninterruptible power supply · Industrial machines, such as welding machines Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector Continuous Tc=25°C current Tc=80°C 1ms Tc=25°C Tc=80°C 1ms Max. power dissipation (1 device) Operating temperature Storage temperature Isolation voltage Screw torque Symbol VCES VGES IC IC pulse -I C -IC pulse PC Tj Tstg Vis Mounting *1 Rating 1200 ±20 75 50 150 100 50 100 360 +150 -40 to +125 AC 2500 (1min.) 3.5 Unit V V A A A A W °C °C V N·m Equivalent Circuit Schematic 1 3 (P ) 1 (G u ) 5 (G v) 9 (G w ) 2 (E u) 1 6 (U ) 6 (E v) 1 5 (V ) 1 0 (E w) 1 4 (W ) 3 (G x) 7 (G y) 1 1 (G z) 4 (E x ) 1 7 (N ) 8 (E y) 1 2 (E z) *1 : Recommendable value : 2.5 to 3.5 N·m (M5) Electrical characteristics (Tj=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr tr(i) toff tf VF trr Characteristics Min. Typ. – – – – 5.5 7.2 – 2.3 – 2.8 – 6000 – 1250 – 1100 – 0.35 – 0.25 – 0.1 – 0.45 – 0.08 – 2.5 – 2.0 – – Conditions Max. 1.0 0.2 8.5 2.65 – – – – 1.2 0.6 – 1.0 0.3 3.3 – 0.35 VGE=0V, VCE=1200V VCE=0V, VGE=±20V VCE=20V, IC=50mA Tj=25°C VGE=15V, IC=50A Tj=125°C VGE=0V VCE=10V f=1MHz VCC=600V IC=50A VGE=±15V RG=24Ω Tj=25°C Tj=125°C IF=50A IF=50A, VGE=0V Unit mA µA V V pF µs Turn-off time Diode forward on voltage Reverse recovery time V µs Thermal resistance characteristics Item Symbol Rth(j-c) Rth(j-c) Rth(c-f)*2 Characteristics Min. Typ. – – – – – 0.05 Conditions Max. 0.35 0.75 – IGBT FWD the base to cooling fin °C/W °C/W °C/W Unit Thermal resistance *2 : This is the value which is defined mounting on the additional cooling fin with thermal compound 6MBI50S-120 Characteristics Collector current vs. Collector-Emitter voltage Tj= 25 C (typ.) 120 120 o IGBT Modules Collector current vs. Collector-Emitter voltage Tj= 125 C (typ.) o VGE= 20V 15V 12V 100 100 VGE= 20V 15V 12V Collector current : Ic [ A ] Collector current : Ic [ A ] 80 80 10V 60 60 10V 40 40 20 20 8V 8V 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 120 10 Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25 C (typ.) o 100 Tj= 25 C o Tj= 125 C 8 Collector - Emitter voltage : VCE [ V ] o Collector current : Ic [ A ] 80 6 60 4 Ic= 100A 2 Ic= 50A Ic= 25A 40 20 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 5 10 15 20 25 Gate.


6MBI50L-120 6MBI50S-120 6MBI50S-120L


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)