Document
6MBI50S-120
IGBT MODULE ( S series) 1200V / 50A 6 in one-package
Features
· Compact package · P.C.board mount · Low VCE(sat)
IGBT Modules
Applications
· Inverter for motor drive · AC and DC servo drive amplifier · Uninterruptible power supply · Industrial machines, such as welding machines
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item Collector-Emitter voltage Gate-Emitter voltage Collector Continuous Tc=25°C current Tc=80°C 1ms Tc=25°C Tc=80°C 1ms Max. power dissipation (1 device) Operating temperature Storage temperature Isolation voltage Screw torque Symbol VCES VGES IC IC pulse -I C -IC pulse PC Tj Tstg Vis Mounting *1 Rating 1200 ±20 75 50 150 100 50 100 360 +150 -40 to +125 AC 2500 (1min.) 3.5 Unit V V A A A A W °C °C V N·m
Equivalent Circuit Schematic
1 3 (P )
1 (G u )
5 (G v)
9 (G w )
2 (E u) 1 6 (U )
6 (E v) 1 5 (V )
1 0 (E w) 1 4 (W )
3 (G x)
7 (G y)
1 1 (G z)
4 (E x ) 1 7 (N )
8 (E y)
1 2 (E z)
*1 : Recommendable value : 2.5 to 3.5 N·m (M5)
Electrical characteristics (Tj=25°C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr tr(i) toff tf VF trr Characteristics Min. Typ. – – – – 5.5 7.2 – 2.3 – 2.8 – 6000 – 1250 – 1100 – 0.35 – 0.25 – 0.1 – 0.45 – 0.08 – 2.5 – 2.0 – – Conditions Max. 1.0 0.2 8.5 2.65 – – – – 1.2 0.6 – 1.0 0.3 3.3 – 0.35 VGE=0V, VCE=1200V VCE=0V, VGE=±20V VCE=20V, IC=50mA Tj=25°C VGE=15V, IC=50A Tj=125°C VGE=0V VCE=10V f=1MHz VCC=600V IC=50A VGE=±15V RG=24Ω Tj=25°C Tj=125°C IF=50A IF=50A, VGE=0V Unit mA µA V V pF
µs
Turn-off time Diode forward on voltage Reverse recovery time
V µs
Thermal resistance characteristics
Item Symbol Rth(j-c) Rth(j-c) Rth(c-f)*2 Characteristics Min. Typ. – – – – – 0.05 Conditions Max. 0.35 0.75 – IGBT FWD the base to cooling fin °C/W °C/W °C/W Unit
Thermal resistance
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
6MBI50S-120
Characteristics
Collector current vs. Collector-Emitter voltage Tj= 25 C (typ.)
120 120
o
IGBT Modules
Collector current vs. Collector-Emitter voltage Tj= 125 C (typ.)
o
VGE= 20V 15V 12V 100 100
VGE= 20V 15V
12V
Collector current : Ic [ A ]
Collector current : Ic [ A ]
80
80
10V 60
60
10V
40
40
20
20 8V 8V
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
Collector current vs. Collector-Emitter voltage VGE=15V (typ.)
120 10
Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25 C (typ.)
o
100
Tj= 25 C
o
Tj= 125 C 8 Collector - Emitter voltage : VCE [ V ]
o
Collector current : Ic [ A ]
80
6
60
4 Ic= 100A 2 Ic= 50A Ic= 25A
40
20
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
0 5 10 15 20 25 Gate.